power transistors 1 publication date: march 2003 sjd00139bed 2SC5104 silicon npn triple diffusion planar type for high breakdown voltage high-speed switching features ? high-speed switching ? high collector-base voltage (emitter open) v cbo ? wide safe operation area ? satisfactory linearity of forward current transfer ratio h fe ? n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 0 400 v collector-base cutoff current (emitter open) i cbo v cb = 500 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 0 100 a forward current transfer ratio h fe1 v ce = 5 v, i c = 0.1 a 15 ? h fe2 v ce = 1 v, i c = 1 a 15 30 collector-emitter saturation voltage v ce(sat) i c = 1.5 a, i b = 0.3 a 1.0 v base-emitter saturation voltage v be(sat) i c = 1.5 a, i b = 0.3 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.2 a, f = 1 mhz 10 mhz turn-on time t on i c = 1.5 a 1.0 s storage time t stg i b1 = 0.15 a, i b2 = ? 0.3 a 3.0 s fall time t f v cc = 200 v 0.3 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 500 v collector-emitter voltage (e-b short) v ces 500 v collector-emitter voltage (base open) v ceo 400 v emitter-base voltage (collector open) v ebo 7v base current i b 1.2 a collector current i c 3a peak collector current i cp 6a collector power dissipation p c 30 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 8.5 0.2 3.4 0.3 1.0 0.1 0 to 0.4 6.0 0.2 0.8 0.1 r = 0.5 r = 0.5 1.0 0.1 0.4 0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54 0.3 1.4 0.1 5.08 0.5 123 1.5 0.1 2.0 0.5 10.0 0.3 1.5 +0 ?0.4 3.0 +0.4 ?0.2 4.4 0.5 4.4 0.5 14.4 0.5 1: base 2: collector 3: emitter n-g1 package note) self-supported type package is also prepared.
2SC5104 2 sjd00139bed p c ? t a i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i c c ob ? v cb t on , t stg , t f ? i c safe operation area 0 0 160 40 120 80 10 30 20 40 collector power dissipation p c (w) ambient temperature t a ( c) (1) (3) (2) (1)t c =ta (2)with a 50 50 2mm al heat sink (3)without heat sink (p c =1.3w) 0 012 210 48 6 6 5 4 3 2 1 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c 400ma 300ma 200ma 100ma 50ma i b =500ma 0.01 0.1 0.1 1 10 100 110100 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =5 ?5?c 25?c t c =100?c 0.1 0.1 1 10 100 1 10 100 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =5 t c =?5?c 25?c 125?c 0.01 0.1 1 10 1 1 000 100 10 forward current transfer ratio h fe collector current i c (a) v ce =5v ?5?c t c =125?c 25?c 0.01 0.1 1 10 0.1 100 10 1 collector current i c (a) transition frequency f t (mhz) v ce =10v f=1mhz t c =25?c 1 10 100 1 1 000 100 10 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.01 0.1 1 10 100 04 13 2 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) t stg t f t on pulsed t w =1ms duty cycle=1% i c /i b =10 (2i b1 =?i b2 ) v cc =200v t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms
2SC5104 3 sjd00139bed r th ? t l i c i b1 v in t w ? i b2 v clamp v cc t.u.t 0 1 3 2 4 0 800 200 600 400 collector current i c (a) collector-emitter voltage v ce (v) l=100h i c /i b =5 (i b1 =?i b2 ) t c =25?c 10 ? 2 10 ? 1 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1)without heat sink (2)with a 50 50 2mm al heat sink (1) (2) safe operation area (reverse bias) safe operation area (reverse bias) measurement circuit
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